Yorktown Heights, NY, United States of America

Randall D Isaac

This inventor holds 3 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1984-1985.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Randall D Isaac. Retrieved from https://idiyas.com/inventor/randall-d-isaac

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.6

ph-index = 3

Forward Citations = 100(Granted Patents)


Company Filing History:


Years Active: 1984-1985

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3 patents (USPTO):Explore Patents

Title: The Innovations of Randall D. Isaac

Introduction

Randall D. Isaac is a notable inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work primarily focuses on advancements in bipolar transistors, which are crucial components in various electronic devices.

Latest Patents

One of his latest patents is titled "Self-aligned bipolar transistor with inverted polycide base contact." This invention features an inverted polycide extrinsic base contact that serves as a diffusion source while maintaining low resistivity. The design is particularly beneficial for manufacturing integrated circuits. The extrinsic base contact layer consists of a metal silicide, such as tungsten silicide (WSi.sub.2), combined with a doped polysilicon layer. This innovative structure allows for efficient diffusion of boron impurities, enhancing the performance of the bipolar transistor.

Another significant patent by Isaac is the "Double self-aligned fabrication process for making a bipolar transistor." This patent describes a bipolar transistor device that incorporates a layer of insulating material covering the substrate. The design includes a small area conductive base contact and a protective wall of insulating material to isolate the base contact from the emitter contact. The double-self-alignment technique used in this fabrication process ensures precision in the alignment of the base and emitter, leading to improved device performance.

Career Highlights

Randall D. Isaac has had a distinguished career at International Business Machines Corporation (IBM). His work has been instrumental in advancing semiconductor technology, particularly in the development of bipolar transistors. His innovative approaches have contributed to the efficiency and effectiveness of electronic devices.

Collaborations

Isaac has collaborated with notable colleagues, including Tak H. Ning and Denny D. Tang. These collaborations have further enriched his research and development efforts, leading to groundbreaking advancements in the field.

Conclusion

Randall D. Isaac's contributions to semiconductor technology through his patents and innovative designs have made a lasting impact on the industry. His work continues to influence the development of electronic devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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