This inventor holds 1 USPTO granted patent. Top assignee: Texas Instruments Corporation. Active years: 1993.
Company Filing History:
Years Active: 1993
Title: Innovations of Rana Lahiry in Non-Volatile Memory Technology
Introduction
Rana Lahiry is an accomplished inventor based in Houston, TX (US). He has made significant contributions to the field of non-volatile memory technology. His innovative work has led to the development of a unique patent that enhances the efficiency and functionality of memory cells.
Latest Patents
Rana Lahiry holds a patent for a "Split-gate cell for an EEPROM." This non-volatile memory cell features heavily doped source and drain regions that are separated by a channel region. The design includes a floating gate that is insulated from the channel region and a control gate that is formed over the floating gate. The cell is programmed by applying specific voltages to the source and drain regions, allowing for efficient charge storage through hot electron injection. This innovative design also includes self-aligned source junctions and graded structures for effective erasure.
Career Highlights
Rana Lahiry is currently employed at Texas Instruments Corporation, where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the capabilities of EEPROMs, making them more efficient and reliable for various applications.
Collaborations
Rana has collaborated with notable colleagues, including Gill Manzur and Cetin Kaya. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Rana Lahiry's contributions to non-volatile memory technology exemplify the spirit of innovation. His patent for the split-gate cell represents a significant advancement in the field, showcasing his expertise and dedication to improving memory solutions.