This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Yale University. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Rami Elafandy: Inventor in III-Nitride Materials
Introduction
Rami Elafandy is an inventor associated with Yale University in Hamden, Connecticut. His patent work concerns III-nitride materials and techniques for controlling their porosity.
Latest Patents
Elafandy is associated with 1 patent, titled “Control and Localization of Porosity in III-Nitrides and Methods of Using and Making Thereof.” The patent describes III-nitride layers with spatially controlled regions or domains of porosity, designed to provide tunable optical, electrical, and thermal properties. It also describes methods for preparing and using these layers.
Career Highlights
Elafandy’s listed invention focuses on controlling porosity in III-nitride layers, an approach that can tailor material properties for potential applications. He is associated with Yale University.
Collaborations
Elafandy’s listed coworker is Jung Han.
Conclusion
Rami Elafandy’s patent highlights his work on spatially controlled porosity in III-nitride materials and methods for making and using these engineered layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile