Raman J Basi

Title: Innovations by Inventor Raman J Basi

Introduction

Raman J Basi is a notable inventor based in Fremont, California. He has made significant contributions to the field of magnetoresistive technology, holding two patents that showcase his innovative approach to high-density magnetic read elements.

Latest Patents

His latest patents include "CoNbTi as high resistivity SAL material for high-density MR" and "AMR read sensor structure and method with high magnetoresistive coefficient." The first patent describes a soft adjacent layer made from a ternary alloy material, specifically CoNbTi, which is utilized in a magnetoresistive sensor. This invention aims to enhance the performance of high-density MR sensors by incorporating a SAL made from the ternary alloy material, along with a MR layer and a non-magnetic spacer. The second patent focuses on a magnetic read element designed for magnetic data retrieval. It features a NiFeCr seed layer and an electrically insulating spacer layer, which work together to improve the efficiency of the read element.

Career Highlights

Raman J Basi is currently employed at Read Rite Corporation, where he continues to develop innovative technologies in the field of data retrieval. His work has contributed to advancements in magnetic read elements, making them more efficient and effective for data storage solutions.

Collaborations

Throughout his career, Basi has collaborated with talented individuals such as Nader Mahvan and Sukesh Mahajan. These collaborations have further enriched his work and contributed to the success of his inventions.

Conclusion

Raman J Basi's contributions to the field of magnetoresistive technology highlight his innovative spirit and dedication to advancing data retrieval methods. His patents reflect a commitment to improving the efficiency of magnetic read elements, making a significant impact in the industry.