Ralph Schweinfurth

Title: Ralph Schweinfurth: Innovator in Semiconductor Technology

Introduction

Ralph Schweinfurth is a notable inventor based in Portland, OR (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for patterning gate electrodes in MOS transistors. His innovative approach has implications for the efficiency and performance of electronic devices.

Latest Patents

Ralph Schweinfurth holds a patent for a "Method of patterning a layer for a gate electrode of a MOS transistor." This patent describes a structure that includes a semiconductor substrate, a gate oxide layer, and a polysilicon layer. The method involves forming a masking layer on the polysilicon layer, which is then patterned into a mask using conventional photolithographic techniques. Notably, this process does not require patterning the polysilicon layer itself. The use of a carbon-free mask for patterning the polysilicon layer minimizes breakthrough through the gate oxide layer, allowing for thinner gate oxide layers and transistors with lower threshold voltages.

Career Highlights

Ralph Schweinfurth is associated with Intel Corporation, a leading company in semiconductor manufacturing. His work at Intel has positioned him as a key player in advancing semiconductor technologies. His innovative methods contribute to the ongoing evolution of electronic components, enhancing their performance and reliability.

Collaborations

Ralph has collaborated with esteemed colleagues such as Robert S. Chau and Thomas A. Letson. These collaborations have fostered an environment of innovation and have led to advancements in semiconductor technology.

Conclusion

Ralph Schweinfurth's contributions to the field of semiconductor technology through his patent and work at Intel Corporation highlight his role as an influential inventor. His innovative methods are paving the way for more efficient electronic devices, showcasing the importance of continuous innovation in technology.