Frankfurt, Germany

Ralf Schulze

This inventor holds 1 USPTO granted patent. Top assignee: Hoechst Aktiengesellschaft. Active years: 1989.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ralf Schulze. Retrieved from https://idiyas.com/inventor/ralf-schulze-abmu6o67

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 1989

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1 patent (USPTO):Explore Patents

Title: Ralf Schulze: Innovator in Radiation-Sensitive Materials

Introduction

Ralf Schulze is a notable inventor based in Frankfurt-am-Main, Germany. He has made significant contributions to the field of radiation-sensitive materials. His work has led to the development of innovative solutions that are essential in various applications.

Latest Patents

Ralf Schulze holds a patent for a radiation-sensitive mixture and radiation-sensitive recording material. This invention showcases his expertise in creating materials that respond effectively to radiation, which is crucial for advancements in technology and manufacturing.

Career Highlights

Throughout his career, Ralf has been associated with Hoechst Aktiengesellschaft, a prominent company in the chemical and pharmaceutical industry. His role at Hoechst has allowed him to focus on research and development, leading to impactful innovations in his field.

Collaborations

Ralf has collaborated with several talented individuals, including Arnold Schneller and Ju Sander. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Ralf Schulze's contributions to radiation-sensitive materials highlight his innovative spirit and dedication to advancing technology. His work continues to influence the industry and inspire future inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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