Munich, Germany

Ralf Ebert

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 2019-2025

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4 patents (USPTO):Explore Patents

Title: Ralf Ebert: Innovator in Memory Technology

Introduction

Ralf Ebert is a prominent inventor based in Munich, Germany. He has made significant contributions to the field of memory technology, holding a total of 4 patents. His work focuses on enhancing data transfer rates in memory devices, which is crucial for improving overall system performance.

Latest Patents

One of Ralf Ebert's latest patents is titled "Multi-level signaling in memory with wide system interface." This patent presents techniques designed to increase the rate of data transfer across a large number of channels in a memory device using multi-level signaling. The innovative approach allows for a higher data transfer rate without the need to increase the frequency of data transfer or the transmit power of the communicated data. An example of the multi-level signaling scheme he discusses is pulse amplitude modulation (PAM), where each unique symbol of the multi-level signal represents a plurality of bits of data.

Career Highlights

Ralf Ebert is currently employed at Micron Technology Incorporated, a leading company in the semiconductor industry. His work at Micron has allowed him to push the boundaries of memory technology and contribute to advancements that benefit various applications in computing and electronics.

Collaborations

Throughout his career, Ralf has collaborated with notable colleagues, including Timothy Mowry Hollis and Markus Balb. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in the field.

Conclusion

Ralf Ebert's contributions to memory technology through his patents and work at Micron Technology Incorporated highlight his role as a key innovator in the industry. His advancements in multi-level signaling are paving the way for faster and more efficient data transfer in memory devices.

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