Ralf-Dieter Boehnke

Title: Ralf-Dieter Boehnke: Innovator in Substrate Layer Technology

Introduction

Ralf-Dieter Boehnke is a notable inventor based in Hamburg, Germany. He has made significant contributions to the field of substrate layer technology, holding a total of 2 patents. His work primarily focuses on methods that enhance the efficiency and effectiveness of substrate processing.

Latest Patents

Boehnke's latest patents include a method of forming at least one groove in a substrate layer. This innovative method involves ion etching, where the substrate layer consists of a top layer with an etch rate S1 and a bottom layer with a different etch rate S2. Initially, grooves are formed with a depth that differs from the desired depth. The etching process is then continued without using a mask until the desired groove depth is achieved. Another significant patent is for a method and device for providing thin layers by cathode sputtering. This invention features a mold and supporting dish for dry-compressed powder targets, designed to allow adsorbed residual gases to escape during the evacuation process. This ensures that the powder target remains intact and undamaged.

Career Highlights

Ralf-Dieter Boehnke is currently associated with U.S. Philips Corporation, where he continues to innovate and develop new technologies. His work has been instrumental in advancing substrate layer processing techniques, making him a valuable asset to his organization.

Collaborations

Throughout his career, Boehnke has collaborated with notable colleagues, including Gert Rabe and Waldemar Gotze. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

Ralf-Dieter Boehnke is a distinguished inventor whose work in substrate layer technology has led to significant advancements in the field. His innovative patents and collaborations highlight his commitment to enhancing technology in this area.