Pully, Switzerland

Rajai Nasser

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: International Business Machines Corporation. Active years: 2014.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Rajai Nasser: Innovator in VLSI Mask Correction

Introduction

Rajai Nasser is a prominent inventor based in Pulley, Switzerland. He has made significant contributions to the field of very large scale integrated (VLSI) semiconductor devices. His innovative work has led to the development of a patent that addresses critical challenges in VLSI mask correction.

Latest Patents

Rajai Nasser holds a patent titled "Polygon recovery for VLSI mask correction." This invention relates to the recovery of polygons from a +1/−1 description of a plurality of polygons used in the production of VLSI semiconductor devices. The patent outlines a method that includes receiving a set of data comprising the +1/−1 description, determining a 4-directional data structure, and recovering the polygons by assigning corners to single polygons based on specific values.

Career Highlights

Rajai Nasser is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of innovation in semiconductor technology. His work has been instrumental in enhancing the efficiency and accuracy of VLSI mask production.

Collaborations

Throughout his career, Rajai has collaborated with notable colleagues, including Joseph Paki and Patrick Droz. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Rajai Nasser's contributions to VLSI mask correction exemplify the impact of innovative thinking in the semiconductor industry. His patent and ongoing work at IBM highlight his commitment to advancing technology and improving production processes.

Profile summary based on public USPTO records.
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