Raj K Raheja

Title: Raj K Raheja: Innovator in Bipolar Transistor Fabrication

Introduction

Raj K Raheja is an accomplished inventor based in Hopewell Junction, NY, known for his contributions to semiconductor technology. With a focus on enhancing the fabrication processes of bipolar transistors, he has made significant strides in this essential field of electronics.

Latest Patents

Mr. Raheja holds a patent for a "Bipolar transistor fabrication process with an ion implanted emitter." This innovative process involves the formation of a high current ion implanted emitter within a diffused base. The method includes creating windows through silicon nitride and silicon dioxide layers to access both the base contact and the emitter regions, followed by protection of these regions with resist. A collector contact window is then opened, leading to the exposed areas being treated through multiple steps to ensure a precise and efficient fabrication process.

Career Highlights

Currently, Raj K Raheja is associated with the International Business Machines Corporation (IBM), a leading figure in technology innovation. His experience and expertise in semiconductor materials and processes underline his commitment to advancing the field.

Collaborations

Throughout his career, Mr. Raheja has collaborated with notable professionals, including Conrad A Barile and George R Goth. Their collective efforts contribute to enhancing research and innovation within the organization, amplifying the impact of their work on the industry.

Conclusion

Raj K Raheja exemplifies the spirit of innovation through his work on bipolar transistor fabrication techniques. His patent not only underscores his ingenuity but also represents a significant advancement in semiconductor technology that benefits the electronics industry. As he continues to work with IBM, his contributions will undoubtedly lead to further breakthroughs in this vital field.