Haasrode, Belgium

Raf Appeltans

USPTO Granted Patents = 4 

 

Average Co-Inventor Count = 2.8

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2018-2022

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4 patents (USPTO):Explore Patents

Title: Raf Appeltans: Innovator in Semiconductor Technology

Introduction

Raf Appeltans is a notable inventor based in Haasrode, Belgium. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on advanced methods of forming semiconductor devices, particularly in the area of field-effect transistors (FETs).

Latest Patents

One of Raf Appeltans' latest patents is a method of forming a semiconductor device. This technology relates to semiconductor devices and methods of forming the same. In one aspect, the method involves creating a semiconductor device with vertical channel FET devices. This includes forming a plurality of semiconductor structures that protrude vertically from a lower source/drain semiconductor layer of the substrate. The semiconductor structures are arranged in an array with multiple rows and columns. The method also includes etching metal line trenches between rows and forming metal lines to contact the lower source/drain layer. Additionally, gate structures are formed to enclose semiconductor structure channel portions located above the lower source/drain layer, along with upper source/drain metal contacts on the upper portions of the semiconductor structures.

Another significant patent by Appeltans is a method of manufacturing a semiconductor device that includes both horizontal and vertical channel FETs. This method encompasses forming a vertical channel FET device region and a horizontal channel FET device region. The vertical channel FET device includes a first semiconductor structure with a lower source/drain portion, an upper source/drain portion, and a first channel portion extending vertically. The horizontal channel FET device comprises a second semiconductor structure with a first source/drain portion, a second source/drain portion, and a second channel portion extending horizontally.

Career Highlights

Raf Appeltans has worked with prominent organizations in the field of semiconductor research and development. He has been associated with Imec Vzw, a leading research and innovation hub in nanoelectronics and digital technologies. Additionally, he has contributed to the academic environment at Katholieke Universiteit Leuven, where he has furthered his research in semiconductor technologies.

Collaborations

Throughout his career, Raf Appeltans has collaborated with talented individuals in the field. Notable coworkers include Praveen Raghavan and Anabela Veloso, who have contributed to various projects and advancements in semiconductor technology.

Conclusion

Raf Appeltans

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