Tessenderlo, Belgium

Rachel Gleeson

This inventor holds 1 USPTO granted patent. Top assignee: Melexis Technologies Nv. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rachel Gleeson. Retrieved from https://idiyas.com/inventor/rachel-gleeson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Rachel Gleeson: Sensor Device Manufacturing Innovation

Introduction

Rachel Gleeson is an inventor associated with Melexis Technologies NV in Tessenderlo, Belgium. Her patent work includes a method for manufacturing a sensor device, with a focus on integrating the sensor element and its electrical connection into a thinned substrate.

Latest Patents

Gleeson is named on one patent, titled “Method of Manufacturing a Sensor Device.” The method forms a substrate containing a sensor element and bonds a cap layer to it before thinning the substrate. It then creates a via connecting the sensor element to the substrate’s back side, providing an electrical connection. A mask defines an area around a predetermined window region, and part of the cap layer around that region is removed after the via is formed. This process describes a structured approach to manufacturing a sensor device with a back-side electrical connection.

Career Highlights

Gleeson’s listed patent activity reflects work on sensor-device manufacturing at Melexis Technologies NV. Her recorded portfolio includes 1 patent.

Collaborations

The patent information associates Gleeson’s invention with Melexis Technologies NV. The available details do not identify additional collaborators.

Conclusion

Rachel Gleeson’s patent describes a manufacturing method that combines substrate thinning, via formation, and cap-layer processing to enable an electrical connection to a sensor element from the substrate’s back side.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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