Carrboro, NC, United States of America

R Peter Smith



Average Co-Inventor Count = 2.9

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2012-2017

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2 patents (USPTO):Explore Patents

Title: R Peter Smith: Innovator in Group III-Nitride Semiconductor Technology

Introduction

R Peter Smith is a notable inventor based in Carrboro, NC (US), recognized for his contributions to the field of semiconductor technology. He holds two patents that focus on advanced methods for forming Group III-nitride semiconductor devices. His work has significant implications for the development of efficient and high-performance electronic components.

Latest Patents

Smith's latest patents include innovative methods for forming Group III-nitride semiconductor devices. The first patent describes methods of forming a semiconductor device that involves implanting ions directly into source and drain regions and subsequently annealing to activate the implanted ions. This process enhances the performance and reliability of semiconductor devices. The second patent outlines methods of fabricating transistors that include self-aligned gate electrodes and source/drain regions. This method improves the precision and efficiency of transistor fabrication, which is crucial for modern electronic applications.

Career Highlights

R Peter Smith is currently employed at Cree GmbH, a company renowned for its advancements in semiconductor technology. His work at Cree GmbH has positioned him as a key player in the development of cutting-edge semiconductor solutions. Smith's expertise in Group III-nitride materials has contributed to the company's reputation as a leader in the industry.

Collaborations

Throughout his career, Smith has collaborated with talented individuals such as Scott Thomas Sheppard and Yifeng Wu. These collaborations have fostered an environment of innovation and have led to significant advancements in semiconductor technology.

Conclusion

R Peter Smith's contributions to the field of semiconductor technology through his patents and work at Cree GmbH highlight his role as an influential inventor. His innovative methods for forming Group III-nitride semiconductor devices are paving the way for future advancements in electronics.

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