The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
May. 09, 2008
Scott T. Sheppard, Chapel Hill, NC (US);
R. Peter Smith, Carrboro, NC (US);
Yifeng Wu, Goleta, CA (US);
Sten Heikman, Goleta, CA (US);
Matthew Jacob-mitos, Santa Barbara, CA (US);
Scott T. Sheppard, Chapel Hill, NC (US);
R. Peter Smith, Carrboro, NC (US);
Yifeng Wu, Goleta, CA (US);
Sten Heikman, Goleta, CA (US);
Matthew Jacob-Mitos, Santa Barbara, CA (US);
Cree, Inc., Durham, NC (US);
Abstract
Methods of forming a semiconductor device include forming a dielectric layer on a Group III-nitride semiconductor layer, selectively removing portions of the dielectric layer over spaced apart source and drain regions of the semiconductor layer, implanting ions having a first conductivity type directly into the source and drain regions of the semiconductor layer, annealing the semiconductor layer and the dielectric layer to activate the implanted ions, and forming metal contacts on the source and drain regions of the semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile