Seoul, South Korea

Quoc Khanh Dang

This inventor holds 1 USPTO granted patent. Top assignee: Korea Institute of Science and Technology. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Quoc Khanh Dang. Retrieved from https://idiyas.com/inventor/quoc-khanh-dang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Quoc Khanh Dang: Innovator in Polymer Membrane Technology

Introduction

Quoc Khanh Dang is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of polymer technology, particularly in the development of advanced membranes. His innovative work has garnered attention in both academic and industrial circles.

Latest Patents

Quoc Khanh Dang holds a patent for a "Perfluorinated sulfonic acid polymer membrane having porous surface layer and method for preparing the same." This invention features a unique structure that includes a porous surface layer and a non-porous dense bottom layer. The method for preparing this membrane involves a solvent evaporation process, which enhances its performance in various applications.

Career Highlights

Quoc Khanh Dang is affiliated with the Korea Institute of Science and Technology, where he conducts research and development in polymer membranes. His work is instrumental in advancing technologies that rely on efficient membrane systems.

Collaborations

Some of his notable coworkers include Dirk Henkensmeier and Chang Won Yoon, who contribute to the collaborative efforts in research and innovation at the institute.

Conclusion

Quoc Khanh Dang's contributions to polymer membrane technology exemplify the spirit of innovation in the scientific community. His patent and ongoing research continue to pave the way for advancements in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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