Quanzhong Jiang

Title: Quanzhong Jiang: Innovator in Semiconductor Technology

Introduction

Quanzhong Jiang is a notable inventor based in Coventry, GB. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device fabrication.

Latest Patents

One of Jiang's latest patents is titled "Layered vertical field effect transistor and methods of fabrication." This invention involves a III-nitride vertical field effect transistor that includes a base plate, a mask layer with opening windows, and a drain that is grown epitaxially onto the exposed regions of the base plate. The design allows for modulation of current flowing from the source to the drain through a conducting channel, which can be controlled by an electrical voltage applied to the vertical nitride stack. Additionally, he has developed a patent for "Substrates for semiconductor devices," which details a method for fabricating a composite semiconductor component using a bowed substrate of synthetic diamond material. This method ensures that the layer of compound semiconductor material contracts appropriately during cooling, achieving a flat configuration.

Career Highlights

Quanzhong Jiang has established himself as a key figure in semiconductor research and development. His work has led to advancements in the efficiency and performance of semiconductor devices, making him a valuable contributor to the industry.

Collaborations

Jiang has collaborated with notable colleagues, including Timothy Peter Mollart and Michael John Edwards. Their combined expertise has furthered the development of innovative semiconductor technologies.

Conclusion

Quanzhong Jiang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the advancement of electronic devices and materials.