Dalian, China

Quanzhi Zhang


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Quanzhi Zhang: Innovator in Semiconductor Technologies

Introduction

Quanzhi Zhang is a prominent inventor based in Dalian, China. He has made significant contributions to the field of semiconductor die etching technologies. His innovative work focuses on enhancing discharge processes in advanced reactors.

Latest Patents

Quanzhi Zhang holds a patent titled "Method for enhancing discharge in magnetized capacitively coupled radio frequency (CCRF) discharge reactor." This patent describes a method that involves constructing a magnetized CCRF discharge reactor and adjusting the magnetic induction intensity to optimize performance. The formula B=(π·m)/e·f is central to this method, where B represents the magnetic induction intensity, π is a constant, m is the electron mass, e is the elementary charge, and f is the RF frequency. This innovation significantly improves power coupling efficiency and increases plasma density.

Career Highlights

Quanzhi Zhang is affiliated with Dalian University of Technology, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications in enhancing reactor performance.

Collaborations

Quanzhi Zhang has collaborated with notable colleagues, including Jingyu Sun and Yuqing Guo. Their combined expertise contributes to the advancement of semiconductor research and development.

Conclusion

Quanzhi Zhang's contributions to semiconductor technologies through his innovative patent demonstrate his commitment to enhancing industrial processes. His work continues to influence the field and pave the way for future advancements.

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