The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Sep. 22, 2022
Applicant:

Dalian University of Technology, Dalian, CN;

Inventors:

Quanzhi Zhang, Dalian, CN;

Jingyu Sun, Dalian, CN;

Yuqing Guo, Dalian, CN;

Younian Wang, Dalian, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32091 (2013.01); H01J 37/3211 (2013.01); H01J 37/32183 (2013.01);
Abstract

The present disclosure relates to the field of semiconductor die etching technologies, and discloses a method for enhancing discharge in a magnetized capacitively coupled radio frequency (CCRF) discharge reactor, including: constructing a magnetized CCRF discharge reactor; and adjusting magnetic induction intensity of the magnetized CCRF discharge reactor, to enable the magnetic induction intensity to meet a relation B=(π·m)/e·f, where in the formula, B represents the magnetic induction intensity of the magnetized CCRF discharge reactor, π represents a circumference, mrepresents an electron mass, e represents an elementary charge, and frepresents an RF frequency. In the present disclosure, power coupling efficiency can be greatly enhanced, and plasma density can be greatly increased.


Find Patent Forward Citations

Loading…