This inventor holds 1 USPTO granted patent. Top assignee: Innoscience (Suzhou) Semiconductor Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Qiyue Zhao and Semiconductor Device Innovation.
Introduction
Qiyue Zhao is an inventor associated with Zhuhai City, China, and Innoscience (Suzhou) Semiconductor Co., Ltd. His listed patent work concerns semiconductor device design and manufacturing.
Latest Patents
Zhao is credited with 1 patent, titled “Semiconductor Device and Manufacturing Method Thereof.” The disclosed device includes a substrate and two nitride semiconductor layers, with the second layer having a greater band gap than the first. A dielectric layer contacts both semiconductor layers and separates them from a gate electrode. The design also includes conductive contacts on the respective layers, with the second contact positioned between the gate electrode and the first contact.
Career Highlights
The available information connects Zhao’s patent activity with Innoscience (Suzhou) Semiconductor Co., Ltd. His listed invention focuses on semiconductor structures and their manufacture.
Collaborations
Zhiwen Dong and Shaopeng Cheng are identified as Zhao’s coworkers. The provided information does not specify their roles in the patent or any particular collaboration.
Conclusion
Qiyue Zhao’s listed patent reflects work on nitride-based semiconductor devices, including their layered structure, dielectric insulation, gate, and conductive contacts.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile