Qixin Li

Title: Qixin Li: Innovator in GaN-based HEMT Technology

Introduction

Qixin Li is a prominent inventor based in Guangdong, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of enhancement-mode GaN-based HEMT devices. His innovative work has led to advancements that are crucial for various electronic applications.

Latest Patents

Qixin Li holds a patent for an "Enhancement-mode GaN-based HEMT device on Si substrate and manufacturing method thereof." This patent describes a device that includes a Si substrate, an AlN nucleation layer, AlGaN transition layers, an AlGaN buffer layer, a low temperature AlN insertion layer, an AlGaN main buffer layer, an AlGaN/GaN superlattice layer, a GaN channel layer, and an AlGaN barrier layer. The design features a source electrode and a drain electrode on either side of the top end, with a gate electrode positioned in the middle. The AlGaN barrier layer is etched to form a recess that connects to the GaN channel layer, and a passivation protective layer along with a gate dielectric layer is deposited at the bottom of the recess.

Career Highlights

Qixin Li is affiliated with the South China University of Technology, where he continues to engage in research and development in semiconductor technologies. His work has garnered attention for its potential applications in high-performance electronic devices.

Collaborations

Qixin Li has collaborated with notable colleagues, including Hong Yang Wang and Quanbin Zhou, contributing to a dynamic research environment that fosters innovation.

Conclusion

Qixin Li's contributions to the field of GaN-based HEMT technology exemplify the impact of innovative thinking in semiconductor development. His patent and ongoing research efforts are paving the way for advancements in electronic applications.