This inventor holds 1 USPTO granted patent. Top assignee: Soochow University. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: The Innovations of Qiuyue Qi
Introduction
Qiuyue Qi is a prominent inventor based in Suzhou, China. She has made significant contributions to the field of quantum dot technology. Her work focuses on the development of advanced materials that have potential applications in various technological domains.
Latest Patents
Qiuyue Qi holds a patent titled "Method for Growing Bimodal-Sized InAs/GaAs Quantum Dots, Quantum Dot, and Quantum Dot Composition." This innovative patent showcases her expertise in the synthesis and application of quantum dots, which are crucial for advancements in optoelectronics and nanotechnology. She has 1 patent to her name.
Career Highlights
Qiuyue Qi is affiliated with Soochow University, where she engages in cutting-edge research. Her academic background and research initiatives have positioned her as a key figure in her field. She continues to explore new frontiers in quantum dot technology, contributing to the scientific community's understanding of these materials.
Collaborations
Qiuyue Qi collaborates with esteemed colleagues, including Zhenwu Shi and Biao Geng. These partnerships enhance her research capabilities and foster innovation in her projects.
Conclusion
In summary, Qiuyue Qi is a talented inventor whose work in quantum dot technology is paving the way for future advancements. Her contributions are vital to the ongoing research and development in this exciting field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile