Company Filing History:
Years Active: 2003-2004
Title: Innovations of Qiuqun Qi in Magnetic Tunnel Junction MRAM Technology
Introduction
Qiuqun Qi is a notable inventor based in Fremont, CA, who has made significant contributions to the field of magnetic tunnel junction (MTJ) MRAM technology. With a total of 6 patents to his name, Qi's work focuses on enhancing the performance and efficiency of MRAM storage devices.
Latest Patents
One of Qi's latest patents is titled "Temperature dependent write current source for magnetic tunnel junction MRAM." This invention involves an MRAM storage device that incorporates temperature-dependent current sources, which adjust their outputs as temperature varies. The design includes one or more diodes connected to a transistor, allowing the voltage drop across the diodes to change with temperature. Additionally, the MRAM data storage device features at least one digit line, one bit line, and one MRAM cell located near the junction of a digit line and a bit line. Each digit line is connected to temperature-dependent current sources and current sinks, while the bit lines are connected to a temperature-dependent current source and a current sink. The operation of this device is activated by two logic signals, R and D, which determine the direction of the write current in the digit line.
Another significant patent by Qi is "Designs of reference cells for magnetic tunnel junction (MTJ) MRAM." This patent describes a reference cell circuit that includes a first magnetic tunnel junction device set to a low resistance state and a second device set to a high resistance state. The reference cell series unit consists of these two devices electrically coupled in series, with connections to current sources and sinks that facilitate efficient operation.
Career Highlights
Throughout his career, Qiuqun Qi has worked with prominent companies in the technology sector, including Western Digital and Read Rite Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in MRAM technology.
Collaborations
Qi has collaborated with several talented individuals in his field, including Xizeng Shi and Matthew R. Gibbons. These partnerships have contributed to the advancement of his research and the successful development of his patents.
Conclusion
Qiuqun Qi's contributions to magnetic tunnel junction MRAM technology demonstrate his innovative spirit and dedication to advancing storage solutions. His patents reflect a deep understanding of the complexities involved in MRAM design and