This inventor holds 3 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 2014-2021.
Company Filing History:
Years Active: 2014-2021
Title: Innovations of Qiuling Jia
Introduction
Qiuling Jia is a notable inventor based in Chengdu, China. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work primarily focuses on enhancing the performance and efficiency of power semiconductor devices.
Latest Patents
One of Qiuling Jia's latest patents is titled "Power MOSFET with metal filled deep sinker contact for CSP." This invention involves a method of forming an integrated circuit that includes a power semiconductor device. The process begins with providing a substrate that has an epitaxial layer, where at least one transistor is formed and covered by a pre-metal dielectric layer. Contact openings are etched through the dielectric layer into the epitaxial layer, creating a sinker trench that extends to a first node of the device. A metal fill material is then deposited to cover the sidewall and bottom of the sinker trench, but it does not completely fill it. A dielectric filler layer is deposited over the metal fill material to fill the trench, and an overburden region is removed to form a sinker contact. Finally, a patterned interconnect metal is formed to connect the interconnect metal and the metal fill material on the sidewall of the sinker trench.
Another significant patent is "Bond pad stack for transistors." This method involves forming bond pads on a semiconductor die by creating a dielectric stack that includes a bottom and top dielectric layer with a contact hole over a bond pad. The outer edge of the bottom dielectric layer extends beyond the top layer to define a bond pad edge. A second metal layer is deposited on a first metal layer, and a photoresist layer is formed within the contact hole. The second metal layer is then wet etched to recess it from the sidewalls of the bottom dielectric layer. A second photoresist layer is also formed, and the first metal layer is wet etched to recess it from the top dielectric layer, extending over the bond pad edge onto the bottom dielectric layer.
Career Highlights
Qiuling Jia is currently employed at Texas Instruments Corporation, where he continues to innovate in the semiconductor industry. His work has contributed to advancements in power semiconductor devices, making them more efficient and reliable.
Collaborations
Throughout his career, Qiuling Jia has collaborated with talented individuals such as Qi Yang and Jing Wang. These collaborations have fostered a creative