Qiufeng Huang

Title: Qiufeng Huang: Innovator in GaN Based LED Technology.

Introduction

Qiufeng Huang is a prominent inventor based in Fujian, China. He has made significant contributions to the field of LED technology, particularly through his innovative work on GaN based LED epitaxial structures. His research focuses on enhancing the efficiency and reducing the production costs of LED devices.

Latest Patents

Qiufeng Huang holds a patent for a GaN based LED epitaxial structure and the method for manufacturing the same. This invention includes a substrate containing a photoluminescence fluorescent material, which enhances the photoelectric efficiency of the LED epitaxial structure. By utilizing a rare earth element doped ReAlO substrate, the amount of heat generated from the device is significantly reduced. The design allows for direct white light emission, simplifying the manufacturing procedure of white light LED light sources and lowering production costs. The defect density of the epitaxial structure is minimized through a unique process of epitaxial growing and patterning.

Career Highlights

Qiufeng Huang is affiliated with the Chinese Academy of Sciences, where he conducts his research and development work. His innovative approach to LED technology has positioned him as a key figure in the field.

Collaborations

He has collaborated with notable colleagues, including Yongge Cao and Zhuguang Liu, to advance research in LED technology.

Conclusion

Qiufeng Huang's contributions to GaN based LED technology demonstrate his commitment to innovation and efficiency in the field. His work not only enhances the performance of LED devices but also contributes to cost-effective manufacturing solutions.