The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2017
Filed:
Jul. 18, 2014
Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, CN;
Yongge Cao, Fujian, CN;
Zhuguang Liu, Fujian, CN;
Zhonghua Deng, Fujian, CN;
Jian Chen, Fujian, CN;
Junting Li, Fujian, CN;
Binjie Fei, Fujian, CN;
Wang Guo, Fujian, CN;
Fei Tang, Fujian, CN;
Qiufeng Huang, Fujian, CN;
Xuanyi Yuan, Fujian, CN;
Abstract
A GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may include: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped ReAlOsubstrate; since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission may be implemented by such an LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, patterning the substrate and then laterally growing a GaN based epitaxial structure.