Kunshan, China

Qingzhao Gu

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Innovations by Qingzhao Gu in Semiconductor Technology

Introduction: Qingzhao Gu, an inventor based in Kunshan, China, has made significant strides in the field of semiconductor technology. With a focus on advancing semiconductor devices, Gu's innovative work has contributed to the development of more efficient and effective manufacturing methods.

Latest Patents: Qingzhao Gu holds a patent for a semiconductor device and method for manufacturing the same. This invention encompasses a unique semiconductor device comprising a substrate, semiconductor layer, dielectric layer, source, drain, and gate. Notably, the design includes a gate with a first curved face that enhances the functionality of the device. The patent illustrates a sophisticated manufacturing process as well, ensuring high performance in semiconductor applications.

Career Highlights: Currently working at Dynax Semiconductor, Inc., Qingzhao Gu has focused his career on pushing the boundaries of semiconductor engineers. His innovative patent signifies his expertise and commitment to enhancing semiconductor technology.

Collaborations: Throughout his career, Gu has collaborated with notable colleagues, including Naiqian Zhang and Xi Song. These partnerships have further propelled advancements in their projects, leading to enhanced research output and innovation in the semiconductor sector.

Conclusion: Qingzhao Gu's contributions to semiconductor technology exemplify the importance of innovation within this critical field. With one patent to his name and ongoing collaborations, Gu is positioned to impact the future of semiconductor devices significantly. His work at Dynax Semiconductor, Inc. reflects a commitment to excellence and progress in technology.

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