Anhui, China

Qingyu Lyu

This inventor holds 1 USPTO granted patent. Top assignee: Hefei University of Technology. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qingyu Lyu. Retrieved from https://idiyas.com/inventor/qingyu-lyu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations of Qingyu Lyu in Electromagnetic Stamping Technology.

Introduction

Qingyu Lyu is a notable inventor based in Anhui, China. He has made significant contributions to the field of electromagnetic stamping technology. His innovative approach has led to the development of a unique method and device that enhances the efficiency of stamping processes.

Latest Patents

Qingyu Lyu holds a patent for an "Electromagnetic Stamping Method and Device." This patent outlines a method that involves dividing a blank holder of a stamping device into multiple areas based on the contour characteristics of the workpiece. The method includes setting a blank holder force function over time for each area, collecting force data, calculating errors, and controlling the blank holder force to achieve optimal stamping results.

Career Highlights

Qingyu Lyu is affiliated with Hefei University of Technology, where he continues to advance his research and development efforts. His work has garnered attention for its practical applications in manufacturing and engineering.

Collaborations

He collaborates with esteemed colleagues, including Lei Li and Haihong Huang, who contribute to his research endeavors. Their combined expertise fosters a productive environment for innovation.

Conclusion

Qingyu Lyu's contributions to electromagnetic stamping technology exemplify the impact of innovative thinking in engineering. His patent reflects a commitment to enhancing manufacturing processes through advanced methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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