This inventor holds 1 USPTO granted patent and 4 published patent applications and 2 EPO patents. Top assignee: Hengdian Group Dmegc Magnetics Co., Ltd. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Qingshan Du and Solar Cell Innovation.
Introduction
Qingshan Du is an inventor associated with Jinhua, China, and Hengdian Group DMEGC Magnetics Co., Ltd. His patent work includes a solar-cell design and a method for preparing it.
Latest Patents
Du is credited with 1 patent: “Solar Cell and Preparation Method Thereof.” The invention describes a semiconductor substrate with hole-transport and electron-transport layers placed at intervals on one surface. The hole-transport layer includes vanadium oxide, while the electron-transport layer includes titanium oxide. Two passivation layers are also incorporated: the first is positioned over the hole-transport layer, and the second covers specified surfaces of the first passivation layer, the electron-transport layer, and the substrate. The patent presents both the cell structure and its preparation method.
Career Highlights
Du’s listed patent reflects work on solar-cell architecture, charge-transport materials, and surface passivation. The available information associates him with Hengdian Group DMEGC Magnetics Co., Ltd.
Collaborations
Chaoyan Fang and Gangfeng Huang are identified as Du’s coworkers. The available information does not specify their roles in the patent or whether they collaborated directly on this invention.
Conclusion
Qingshan Du’s recorded patent focuses on a solar cell combining vanadium-oxide and titanium-oxide transport layers with a layered passivation structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile