This inventor holds 1 USPTO granted patent. Top assignee: China Academy of Space Technology. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Qingkui Yu and SiC MOSFET Radiation Testing.
Introduction
Qingkui Yu is an inventor based in Beijing, China, associated with the China Academy of Space Technology. His work includes a method for evaluating the total-dose radiation effects of silicon carbide (SiC) MOSFET devices, which are relevant to electronics designed for radiation environments.
Latest Patents
Yu is named on 1 patent: “Method for Testing Total Dose Effect of SiC MOSFET Device.” The method evaluates a device through sequential testing before irradiation, pre-irradiation annealing, irradiation, post-irradiation annealing, and analysis of the resulting test data.
The approach distinguishes threshold-voltage shifts caused by radiation-induced defects from shifts associated with near-interface trap charges at the SiC MOSFET interface. By analyzing and calculating these effects, the method assesses the device’s resistance to total-dose radiation and can help guide device-hardening efforts.
Career Highlights
Yu’s documented patent work focuses on testing and analyzing the radiation response of SiC MOSFET devices. The method provides a structured way to examine how irradiation and annealing affect device behavior.
Collaborations
Yu’s listed coworkers include He Wang and Shuang Cao. His patent is associated with the China Academy of Space Technology.
Conclusion
Qingkui Yu’s patent presents a systematic approach to measuring and interpreting total-dose radiation effects in SiC MOSFET devices, supporting their evaluation and potential reinforcement for radiation-exposed applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile