This inventor holds 1 USPTO granted patent. Top assignee: Chinese Academy of Sciences. Active years: 2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2011
Title: Innovations of Qihang Qin in Magnetic Multilayer Films
Introduction
Qihang Qin is a notable inventor based in Beijing, China. He has made significant contributions to the field of magnetic multilayer films, particularly in the development of innovative technologies that enhance the functionality of various devices.
Latest Patents
Qin holds a patent for a "Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same." This invention features a magnetic multilayer film where each layer is designed as a closed ring or oval ring. The magnetic moment or flux of the ferromagnetic film can be oriented either clockwise or counterclockwise. A metal core is strategically placed at the geometric center of the film, with a cross-section that is circular or oval. This technology is pivotal in the creation of Magnetoresistive Random Access Memory (MRAM) and can be utilized in various devices, including magnetic beads in computers, magnetic sensitive sensors, magnetic logic devices, and spin transistors.
Career Highlights
Qihang Qin is affiliated with the Chinese Academy of Sciences, where he continues to advance research in magnetic materials and their applications. His work has garnered attention for its potential to revolutionize the way magnetic films are used in technology.
Collaborations
Qin has collaborated with esteemed colleagues such as Ming Ma and Hongxiang Wei, contributing to a rich environment of innovation and research.
Conclusion
Qihang Qin's contributions to the field of magnetic multilayer films exemplify the impact of innovative thinking in technology. His patent and ongoing research hold promise for future advancements in various electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
