This inventor holds 1 USPTO granted patent. Top assignee: Sandisk Technologies Inc.. Active years: 2023.
Company Filing History:
Years Active: 2023
Title: Qihan Li: Innovator in Nonvolatile Memory Technology
Introduction
Qihan Li is a prominent inventor based in San Jose, California. He has made significant contributions to the field of nonvolatile memory technology. His innovative work has led to the development of a patent that enhances data recovery processes in memory systems.
Latest Patents
Qihan Li holds a patent for a nonvolatile memory with data recovery. This invention includes an apparatus with control circuits designed to connect to a plurality of non-volatile memory cells. The control circuits are configured to abort fine programming of these memory cells at an intermediate stage. They can read the memory cells at this stage to obtain first partial data of at least one logical page. Furthermore, the control circuits can obtain the logical page of data by combining the first partial data with second partial data stored in data latches. This innovation is crucial for improving data integrity and recovery in memory devices.
Career Highlights
Qihan Li is currently employed at SanDisk Technologies Inc., a leading company in the storage solutions industry. His work at SanDisk has allowed him to focus on advancing memory technologies and contributing to the company's innovative product offerings. His expertise in nonvolatile memory systems has positioned him as a valuable asset to the team.
Collaborations
Qihan Li has collaborated with notable colleagues, including Hiroyuki Mizukoshi and Heguang Li. These collaborations have fostered a creative environment that encourages the exchange of ideas and advancements in technology.
Conclusion
Qihan Li's contributions to nonvolatile memory technology exemplify the impact of innovation in the tech industry. His patent for data recovery in memory systems showcases his commitment to enhancing data integrity. Through his work at SanDisk Technologies Inc., he continues to push the boundaries of what is possible in memory technology.
