This inventor holds 1 USPTO granted patent. Top assignee: University of Electronic Science and Technology of China. Active years: 2021.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2021
Title: Innovations of Qifei Xu in GaN Power Devices
Introduction
Qifei Xu is a notable inventor based in Chengdu, China. He has made significant contributions to the field of power electronics, particularly in the development of GaN (Gallium Nitride) power devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this advanced technology.
Latest Patents
Qifei Xu holds a patent for a "Segmented direct gate drive circuit of a depletion mode GaN power device." This invention involves a unique method of charging the gate voltage of a GaN power device. The process begins by charging the gate voltage from a negative voltage turn-off level to the threshold voltage of the device. Once the gate voltage reaches the threshold, a current mirror charging module activates a limited number of charging current mirror modules to elevate the gate voltage to a Miller platform voltage. Subsequently, all charging current mirror modules are engaged to bring the gate voltage to a zero level. This innovative approach enhances the efficiency and performance of GaN power devices.
Career Highlights
Qifei Xu is affiliated with the University of Electronic Science and Technology of China, where he continues to advance his research in power electronics. His academic background and professional experience have positioned him as a key figure in the development of cutting-edge technologies in this field.
Collaborations
Qifei Xu has collaborated with notable colleagues, including Xin Ming and Bo Zhang. Their combined expertise contributes to the innovative research and development efforts at their institution.
Conclusion
Qifei Xu's contributions to the field of GaN power devices exemplify the spirit of innovation and advancement in technology. His patent reflects a significant step forward in enhancing the performance of power electronics. The work he continues to pursue at the University of Electronic Science and Technology of China is likely to influence future developments in this critical area.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile