Qiaoming Cai

Title: Qiaoming Cai: Semiconductor Structure and Gate Formation

Introduction

Qiaoming Cai is an inventor based in Beijing, China. His work includes semiconductor device structures and methods for forming them.

Latest Patents

Cai is associated with 1 patent, titled “Semiconductor Structure and Method for Forming Same.” The patent describes a process for forming discrete poly gate layers in two regions of a base. In the first region, a bottom gate layer and a protruding top gate layer define a groove, with a polish block layer formed along its sidewall. After an interlayer dielectric layer is formed, the poly gate layer in the second region is removed to create a gate opening, which is then filled with a metal gate layer. The disclosed approach concerns semiconductor structure fabrication and gate formation.

Career Highlights

Cai is associated with Semiconductor Manufacturing North China (Beijing) Corporation. His patent reflects work in semiconductor manufacturing, particularly the formation of gate structures.

Collaborations

Cai’s listed coworker is Lisha MA. The available information identifies this professional connection but does not specify their particular collaborative projects.

Conclusion

Qiaoming Cai’s recorded patent focuses on a semiconductor structure and its manufacturing process, highlighting his connection to gate formation technology and semiconductor fabrication.