Qianyuan Wang

Title: Qianyuan Wang and SiC MOSFET Radiation Testing.

Introduction

Qianyuan Wang is an inventor based in Beijing, China, whose work includes a method for testing the total dose effect of silicon carbide (SiC) MOSFET devices. He is associated with the China Academy of Space Technology.

Latest Patents

Wang is named on 1 patent: “Method for Testing Total Dose Effect of SiC MOSFET Device.” The method evaluates how total-dose radiation affects a SiC MOSFET through a sequence of pre-irradiation testing and annealing, irradiation, post-irradiation annealing, and analysis of the resulting test data.

The approach distinguishes threshold-voltage shifts caused by radiation-induced defects from shifts associated with near-interface trap charges. By analyzing these effects, the method helps assess a device’s resistance to total-dose radiation and can guide device reinforcement.

Career Highlights

Wang’s listed patent focuses on evaluating the radiation tolerance of SiC MOSFET devices, a capability relevant to assessing electronic components for demanding environments. His association with the China Academy of Space Technology connects his work to an organization focused on space technology.

Collaborations

Qingkui Yu and He Wang are identified as Wang’s coworkers. The available information does not specify their roles in the patent or whether they collaborated with him on this invention.

Conclusion

Qianyuan Wang’s patent presents a structured method for measuring and analyzing total-dose radiation effects in SiC MOSFET devices, supporting evaluation of their radiation resistance and potential reinforcement.