Suzhou, China

Qiang He

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Huawei Technologies Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qiang He. Retrieved from https://idiyas.com/inventor/qiang-he-vgzk34yd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Qiang He: Innovator in High Electron Mobility Transistors

Introduction

Qiang He is a prominent inventor based in Suzhou, China. He has made significant contributions to the field of electronics, particularly in the development of high electron mobility transistors. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this advanced technology.

Latest Patents

Qiang He holds a patent for a high electron mobility transistor and its manufacturing method, as well as related components such as chips and electronic devices. The technology described in his patent involves a high electron mobility transistor that includes a GaN substrate layer, a barrier layer, a circuit layer, and a field plate that are sequentially stacked. The GaN substrate layer consists of a main body layer and a channel layer, with the channel layer adjacent to the barrier layer. The circuit layer features a source, a drain, and a dielectric layer positioned between them. The field plate is strategically placed on the dielectric layer, and its orthographic projection on the channel layer overlaps with the modulation region of the channel layer.

Career Highlights

Qiang He is associated with Huawei Technologies Co., Ltd., a leading global provider of information and communications technology (ICT) infrastructure and smart devices. His work at Huawei has allowed him to be at the forefront of technological advancements in the electronics sector. He has been instrumental in developing innovative solutions that enhance the performance and efficiency of electronic devices.

Collaborations

Throughout his career, Qiang He has collaborated with talented professionals in the field, including Zhili Zhang and Jin Rao. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Qiang He is a notable inventor whose work in high electron mobility transistors has made a significant impact in the electronics industry. His patent reflects his innovative spirit and dedication to advancing technology. His contributions continue to influence the development of electronic devices, showcasing the importance of innovation in this rapidly evolving field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…