Suzhou, China

Qian Sun

This inventor holds 3 USPTO granted patents and 3 published patent applications and 3 EPO patents. Top assignee: Chinese Academy of Sciences. Active years: 2020-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qian Sun. Retrieved from https://idiyas.com/inventor/qian-sun-puohdwrq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 100.0

 

Average Co-Inventor Count = 6.3

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2020-2024

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3 patents (USPTO):Explore Patents

Title: Innovator Qian Sun: A Pioneer in Semiconductor Technology

Introduction: Qian Sun, an accomplished inventor based in Suzhou, China, has made significant contributions to semiconductor technology with three patented inventions. His innovations focus on enhancing the performance and precision of semiconductor devices, addressing challenges in manufacturing methods and etching processes.

Latest Patents: Qian Sun's latest patents include groundbreaking advancements in semiconductor device manufacturing. The first patent, titled "Semiconductor device and manufacturing method thereof employing an etching transition layer," introduces a novel manufacturing method that includes a semiconductor material layer comprising two laminated semiconductor layers and an etching transition layer. This process allows for the precise formation of trench structures within the semiconductor material, minimizing surface damage and ensuring stable electrical characteristics.

In addition, his second patent, "Group III nitride enhancement-mode HEMT based on composite barrier layer structure and manufacturing method thereof," presents an innovative enhancement-mode High Electron Mobility Transistor (HEMT). This invention features a composite barrier layer structure, optimizing the interaction between various semiconductor components, ultimately improving device efficiency and performance.

Career Highlights: Qian Sun is currently employed at the Chinese Academy of Sciences, where he conducts extensive research and development in semiconductor technologies. His expertise in etching processes and layered semiconductor structures has positioned him as a leading figure in this highly specialized field.

Collaborations: Throughout his career, Qian has collaborated with notable professionals, including his coworker, Hongwei Gao. Her contributions to their projects have further advanced their shared research goals, facilitating innovative breakthroughs in semiconductor technology.

Conclusion: Qian Sun's dedication to refining semiconductor manufacturing methods highlights his role as a pioneering inventor. His latest patents not only showcase his technical expertise but also reflect the significant impact of his innovations on the future of semiconductor technology and devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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