ChongQing, China

Qian Chen

USPTO Granted Patents = 1 

 

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Qian Chen: Innovator in Semiconductor Technology

Introduction

Qian Chen is a prominent inventor based in Chongqing, China. She has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistor structures. Her innovative work has garnered attention in the industry and has led to the filing of a patent that showcases her expertise.

Latest Patents

Qian Chen holds a patent for a "Trench field effect transistor structure free from contact hole." This invention provides a novel manufacturing method for trench field effect transistors. The method includes several steps, such as providing a semiconductor substrate, forming an epitaxial layer, and creating various gate structures. Notably, the self-aligned source implantation technique reduces cell dimensions and allows for equal-potential electrical lead-out of the source and body region without the need for a source contact hole. This innovation represents a significant advancement in semiconductor manufacturing.

Career Highlights

Qian Chen is currently employed at China Resources Microelectronics (Chongqing) Co., Ltd. Her role at the company allows her to apply her knowledge and skills in semiconductor technology, contributing to the development of cutting-edge electronic components. Her work has positioned her as a key player in the industry, and her patent reflects her commitment to innovation.

Collaborations

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Conclusion

Qian Chen's contributions to semiconductor technology through her innovative patent demonstrate her expertise and commitment to advancing the field. Her work continues to influence the industry and pave the way for future developments in electronics.

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