This inventor holds 1 USPTO granted patent. Top assignee: Chongqing University. Active years: 2020.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2020
Title: Innovations of Qi Yuan in Semiconductor Technology
Introduction
Qi Yuan is a notable inventor based in Chongqing, China. He has made significant contributions to the field of semiconductor power devices. His innovative work focuses on enhancing the performance of insulated gate bipolar transistors.
Latest Patents
Qi Yuan holds a patent for a high-speed superjunction lateral insulated gate bipolar transistor. This invention addresses the challenges associated with fast turn-off capabilities in bulk silicon substrates. By utilizing a heavily doped substrate, his design ensures a breakdown voltage while optimizing the total number of impurities in the drift regions. This advancement paves the way for further applications in integrated circuits.
Career Highlights
Qi Yuan is affiliated with Chongqing University, where he continues to advance his research in semiconductor technology. His work has garnered attention for its practical implications in improving device performance and cost-effectiveness.
Collaborations
Qi Yuan collaborates with colleagues such as Zhi Lin and Shu Han, who contribute to his research endeavors. Their combined expertise enhances the development of innovative solutions in the semiconductor field.
Conclusion
Qi Yuan's contributions to semiconductor technology exemplify the importance of innovation in enhancing device performance. His patent on high-speed superjunction lateral insulated gate bipolar transistors represents a significant step forward in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile