Seoul, South Korea

PyongHwa Jang

This inventor holds 1 USPTO granted patent. Top assignee: Oci Company Ltd.. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: PyongHwa Jang. Retrieved from https://idiyas.com/inventor/pyonghwa-jang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Innovations by PyongHwa Jang in Semiconductor Technology.

Introduction

PyongHwa Jang is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to etching compositions.

Latest Patents

Jang holds a patent for "Etching compositions and method of etching by using the same." This invention pertains to an etching composition that includes a compound capable of selectively removing a nitride film with high selectivity while minimizing the etch rate of the oxide film. The method is particularly useful in preparing semiconductor devices, enhancing the efficiency and effectiveness of the etching process.

Career Highlights

Throughout his career, PyongHwa Jang has been associated with Oci Company Ltd., where he has contributed to various projects in semiconductor technology. His work has been instrumental in advancing etching methods that are crucial for the fabrication of semiconductor devices.

Collaborations

Jang has collaborated with notable colleagues, including HoSeong Yoo and JunEun Lee, to further enhance the research and development efforts within his field.

Conclusion

PyongHwa Jang's innovative work in etching compositions has made a significant impact on semiconductor technology. His contributions continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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