Company Filing History:
Years Active: 2022
Title: Puzant Baliozian: Innovator in Semiconductor Technology
Introduction
Puzant Baliozian is a notable inventor based in Freiburg, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work has implications for the efficiency and functionality of semiconductor components.
Latest Patents
Baliozian holds a patent for a semiconductor component and method for singulating a semiconductor component having a pn junction. This patent describes a semiconductor component that features a front side, a rear side, and side surfaces, with at least one emitter and one base. A pn junction is formed between the emitter and base, with the emitter extending parallel to the front and/or rear side. The design includes a passivated separating surface, which is crucial for enhancing the performance of the semiconductor component. The patent emphasizes the importance of a separating surface passivation layer that contains stationary charges with a surface charge density of greater than or equal to 10 cm-2.
Career Highlights
Throughout his career, Baliozian has worked with prestigious organizations, including the Fraunhofer Society for the Advancement of Applied Research. His experience in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research.
Collaborations
Some of his notable coworkers include Elmar Lohmüller and Ralf Preu. Their collaborative efforts have further advanced the research and development of semiconductor technologies.
Conclusion
Puzant Baliozian's contributions to semiconductor technology through his innovative patent and collaborations with esteemed colleagues highlight his role as a significant inventor in the field. His work continues to influence advancements in semiconductor components.