The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2022

Filed:

Sep. 24, 2019
Applicant:

Fraunhofer-gesellschaft Zur Forderung Der Angewandten Forschung E.v., Munich, DE;

Inventors:

Elmar Lohmüller, Freiburg, DE;

Ralf Preu, Freiburg, DE;

Puzant Baliozian, Freiburg, DE;

Tobias Fellmeth, Freiburg, DE;

Nico Wöhrle, Freiburg, DE;

Pierre Saint-Cast, Freiburg, DE;

Florian Clement, Freiburg, DE;

Andreas Brand, Freiburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/068 (2012.01); H01L 23/31 (2006.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/068 (2013.01); H01L 23/3171 (2013.01); H01L 23/3185 (2013.01); H01L 31/02167 (2013.01); H01L 31/1804 (2013.01); H01L 31/1868 (2013.01);
Abstract

A a semiconductor component () having a front side and an opposite rear side and also side surfaces, and also at least one emitter () and at least one base (), wherein a pn junction () is formed between emitter () and base () and the emitter () extends parallel to the front and/or rear side. At least one side surface is a passivated separating surface (T), at which a separating surface passivation layer () is arranged, which has stationary charges having a surface charge density at the separating surface (T) with a magnitude of greater than or equal to 10cm-2. A method for singulating a semiconductor component () having a pn junction is also provided.


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