Purushothaman Srinivasan

Title: Innovations of Purushothaman Srinivasan

Introduction

Purushothaman Srinivasan is a notable inventor based in Allen, Texas. He has made significant contributions to the field of integrated circuits, particularly in the area of noise reduction in NMOS devices. With a total of two patents to his name, his work has had a considerable impact on the technology industry.

Latest Patents

Srinivasan's latest patents focus on methods for 1/F noise reduction in NMOS devices. The integrated circuit he developed features a minimum gate length of low-noise NMOS transistors that is less than twice that of logic NMOS transistors. This innovative approach involves several steps, including the concurrent formation of gates for both low-noise and logic NMOS transistors, the creation of a low-noise NMDD implant mask, and the careful ion implantation of n-type NMDD dopants and fluorine into the low-noise NMOS transistors. Additionally, he limits p-type halo dopants to less than 20 percent of the corresponding logic NMOS halo dose, ensuring optimal performance.

Career Highlights

Throughout his career, Purushothaman Srinivasan has worked with prominent companies such as Texas Instruments Incorporated and Texas Instruments Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in the field of electronics.

Collaborations

Srinivasan has collaborated with various professionals in his field, including his coworker Alwin J Tsao. These partnerships have fostered an environment of creativity and innovation, leading to advancements in technology.

Conclusion

Purushothaman Srinivasan's contributions to the field of integrated circuits and noise reduction techniques have established him as a significant figure in the technology sector. His innovative patents and collaborations continue to influence the industry positively.