Company Filing History:
Years Active: 2016
Title: Pramey Upadhyaya: Innovator in Magnetic Memory Technology
Introduction
Pramey Upadhyaya is a notable inventor based in Los Angeles, CA. He has made significant contributions to the field of magnetic memory technology. His innovative work focuses on the development of magnetic memory bits that utilize current-induced spin-orbit torques.
Latest Patents
Upadhyaya holds a patent for "Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques." This patent describes a basic Spin-Orbit-Torque (SOT) structure with lateral structural asymmetry. This structure produces a new spin-orbit torque, enabling zero-field current-induced switching of perpendicular magnetization. The invention allows for the creation of more complex structures that incorporate a ferromagnetic layer with a heavy non-magnetic metal layer on one side and an insulator layer on the other side. The lateral structural asymmetry and new spin-orbit torque effectively replace the need for an external in-plane magnetic field. The direction of switching is determined by the combination of the applied current's direction and the symmetry breaking in the device.
Career Highlights
Upadhyaya is affiliated with the University of California, where he continues to advance research in magnetic memory technologies. His work has garnered attention for its potential applications in data storage and processing.
Collaborations
He has collaborated with notable researchers such as Kang L Wang and Pedram Khalili Amiri, contributing to the advancement of knowledge in his field.
Conclusion
Pramey Upadhyaya's innovative work in magnetic memory technology exemplifies the impact of current-induced spin-orbit torques on modern data storage solutions. His contributions are paving the way for future advancements in this critical area of research.