The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Oct. 30, 2014
Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques
The Regents of the University of California, Oakland, CA (US);
Kang L. Wang, Santa Monica, CA (US);
Pedram Khalili Amiri, Los Angeles, CA (US);
Guoqiang Yu, Los Angeles, CA (US);
Pramey Upadhyaya, Los Angeles, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
A basic Spin-Orbit-Torque (SOT) structure with lateral structural asymmetry is provided that produces a new spin-orbit torque, resulting in zero-field current-induced switching of perpendicular magnetization. More complex structures can also be produced incorporating the basic structure of a ferromagnetic layer with a heavy non-magnetic metal layer having strong spin-orbit coupling on one side, and an insulator layer on the other side with a structural mirror asymmetry along the in-plane direction. The lateral structural asymmetry and new spin-orbit torque, in effect, replaces the role of the external in-plane magnetic field. The direction of switching is determined by the combination of the direction of applied current and the direction of symmetry breaking in the device.