Hsinchu, Taiwan

Po-Yuan Hsieh

This inventor holds 2 USPTO granted patents. Top assignees: Coretronic Corporation, National Yang Ming Chiao Tung University. Active years: 2015-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Po-Yuan Hsieh. Retrieved from https://idiyas.com/inventor/po-yuan-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Changhua, TW (2015)
  • Hsin-Chu, TW (2021)

Company Filing History:


Years Active: 2015-2021

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2 patents (USPTO):Explore Patents

Title: The Innovative Journey of Po-Yuan Hsieh

Introduction:

Po-Yuan Hsieh, a talented inventor hailing from Hsin-Chu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Po-Yuan Hsieh's latest patents showcase his commitment to pushing the boundaries of technology and include advancements in semiconductor devices and renewable energy solutions.

Career Highlights:

Throughout his illustrious career, Po-Yuan Hsieh has worked tirelessly to develop cutting-edge technologies that have revolutionized the industry. His expertise in semiconductor engineering has led to the creation of innovative solutions that have improved efficiency and performance across various sectors.

Collaborations:

Po-Yuan Hsieh has collaborated with leading research institutions and technology companies to further his research and bring his inventions to life. His collaborative spirit has allowed him to leverage the expertise of others in the field, leading to groundbreaking innovations.

Conclusion:

In conclusion, Po-Yuan Hsieh's passion for innovation and dedication to his craft have solidified his position as a pioneering inventor in the technology industry. His contributions have not only advanced the field but have also inspired future generations of inventors to continue pushing the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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