Po-Yao Hsieh

Title: Po-Yao Hsieh: Innovator in CMOS Image Sensor Technology

Introduction

Po-Yao Hsieh is a notable inventor based in Taipei Hsien, Taiwan. He has made significant contributions to the field of image sensor technology, particularly through his innovative work on active photodiode CMOS image sensors. His expertise and creativity have led to advancements that enhance the performance of imaging devices.

Latest Patents

Hsieh holds a patent for an "Active photodiode CMOS image sensor structure." This invention features a light-sensitive photodiode region, a transistor, and a cover layer. The light-sensitive region is formed in a substrate body, while the transistor is positioned above it. The source region of the transistor is connected to the light-sensitive region, and the cover layer is created using a method similar to that used for forming the gate dielectric layer. This innovative design aims to improve the efficiency and functionality of CMOS image sensors.

Career Highlights

Po-Yao Hsieh is currently associated with Twin Han Technology Co., Ltd. His role in the company allows him to apply his inventive skills and contribute to the development of cutting-edge technologies in the imaging sector. His work has garnered attention for its potential applications in various electronic devices.

Conclusion

Po-Yao Hsieh's contributions to CMOS image sensor technology exemplify the impact of innovation in the field of electronics. His patent reflects a commitment to advancing imaging technology, and his work continues to influence the industry.