The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Jun. 26, 2000
Applicant:
Inventors:
Po-Yao Hsieh, Taipei Hsien, TW;
Chih-Wei Hsu, Taipei, TW;
Assignee:
Twin Han Technology Co., Ltd., Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1062 ;
U.S. Cl.
CPC ...
H01L 3/1062 ;
Abstract
An active photodiode CMOS image sensor comprising a light-sensitive photodiode region, a transistor and a cover layer. The light-sensitive region is formed in a substrate body and the transistor is formed above the substrate body. The source region of the transistor is connected to the light-sensitive region. The cover layer is formed above the light-sensitive photodiode region using a method similar to method used to form the gate dielectric layer.