Yunlin, Taiwan

Po-Syuan Chen

This inventor holds 1 USPTO granted patent. Top assignee: Silicon Motion, Inc.. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Po-Syuan Chen. Retrieved from https://idiyas.com/inventor/po-syuan-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2013

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Po-Syuan Chen: Innovator in Flash Memory Technology

Introduction

Po-Syuan Chen is a notable inventor based in Yunlin, Taiwan. He has made significant contributions to the field of flash memory technology. His innovative approach has led to the development of a unique method for accessing flash memory.

Latest Patents

Po-Syuan Chen holds a patent titled "Method for accessing flash memory and associated memory device." This patent describes a method that includes writing a data stream into at least a page of at least one data block of the flash memory. Each page of the data block includes an identity code. The method also involves reading at least one identity code of the page and determining a specific page based on the identity code. The specific page is identified as the last page that the data stream was written to before the flash memory is disconnected from a power source. He has 1 patent to his name.

Career Highlights

Po-Syuan Chen is currently employed at Silicon Motion, Inc., where he continues to advance his research and development in memory technologies. His work has been instrumental in enhancing the efficiency and reliability of flash memory devices.

Collaborations

He collaborates with fellow innovator Chi-Hsiang Hung, contributing to the advancement of technology in their field.

Conclusion

Po-Syuan Chen's contributions to flash memory technology exemplify the spirit of innovation. His patented methods are paving the way for future advancements in memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…