Hsinchu, Taiwan

PO-Chin Nien

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: PO-Chin Nien. Retrieved from https://idiyas.com/inventor/po-chin-nien-it0feb94

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: PO-Chin Nien: Semiconductor Process Innovation

Introduction

PO-Chin Nien is an inventor associated with Hsinchu, Taiwan, and Taiwan Semiconductor Manufacturing Co., Ltd. His patent work addresses impurity removal during chemical mechanical planarization, a process used in semiconductor manufacturing.

Latest Patents

The provided information identifies one patent associated with Nien: “System and Method for Removing Impurities During Chemical Mechanical Planarization.” The invention describes a system with a rotating polishing pad, a wafer held against the pad by a planarization head, a slurry supply system, and a pad conditioner. An impurity removal system removes debris and other impurities from the slurry during the process. Nien is credited with 1 patent in the supplied data.

Career Highlights

Nien’s listed patent reflects work on improving chemical mechanical planarization by addressing contamination in the slurry. The supplied information associates him with Taiwan Semiconductor Manufacturing Co., Ltd., a semiconductor company based in Taiwan.

Collaborations

Chih Hung Chen is identified as Nien’s coworker. The provided details do not specify their roles or describe a particular joint project.

Conclusion

PO-Chin Nien’s listed invention focuses on removing impurities during chemical mechanical planarization, highlighting a practical approach to supporting semiconductor wafer processing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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