Png Rui-Qi

Title: Png Rui-Qi: Innovator in Organic Field-Effect Transistors

Introduction

Png Rui-Qi is a notable inventor based in Singapore, recognized for his contributions to the field of organic electronics. He holds a patent that showcases his innovative approach to improving transistor device structures.

Latest Patents

Png Rui-Qi's patent, titled "Organic field-effect-transistors with low contact resistance," presents a groundbreaking transistor device structure. This invention incorporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array. The semiconductor is p-doped at the interface with the bonded-anion layer. The method of making this structure utilizes oxidant species incorporated into the molecularly-thin layer. The device demonstrates ohmic hole injection and hole extraction at the contacts, resulting in high-performance transistor characteristics with low contact resistance.

Career Highlights

Throughout his career, Png Rui-Qi has worked with prominent organizations, including BASF SE Corporation and the National University of Singapore. His work has significantly impacted the development of organic electronics and transistor technology.

Collaborations

Png Rui-Qi has collaborated with esteemed colleagues, including Mi Zhou and Peter K-h Ho, contributing to advancements in his field.

Conclusion

Png Rui-Qi's innovative work in organic field-effect transistors exemplifies his commitment to advancing technology in electronics. His contributions continue to influence the industry and inspire future innovations.